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| RF3108 2 Typical Applications * 3V Dual-Band/Triple-Band GSM Handsets * Commercial and Consumer Systems * Portable Battery-Powered Equipment * GPRS Compatible TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE 2 POWER AMPLIFIERS 10.0 + 0.10 1.00 typ. Product Description The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is self-contained with 50 input and output terminals. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM/DCS and PCS hand held-digital cellular equipment and other applications in the 880MHz to 915MHz and 1710MHz to 1910MHz bands. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic "low" for standby operation. The device is packaged in an ultra-small (9mmx10mm) LCC, minimizing the required board space. 1.40 1.40 1.40 1.40 1.40 1.40 1.30 0.30 0.60 typ. 9.0 + 0.10 Note orientation of Pin 1. 0.90 typ. 0.38 Ref. 1.55 + 0.10 NOTE: Shaded area represents Pin 1. Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS u Package Style: Module GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features * Single 2.9V to 4.7V Supply Voltage * +35.5dBm GSM Output Pwr at 3.5V VCC PCS IN PCS VAPC GND GSM VAPC GSM IN VCC 1 2 3 4 5 6 7 14 13 12 11 10 9 8 PCS OUT GND GND VCC GND GND GSM OUT * +33.0dBm DCS/PCS Output Pwr at 3.5V * 55% GSM and 50% DCS/PCS Efficiency * Supports GSM, E-GSM and DCS/PCS * 9mmx10mm Package Size Ordering Information RF3108 RF3108 PCBA Triple-Band GSM/DCS/PCS Power Amp Module Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A3 010702 2-261 RF3108 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VAPC1,2) DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Rating -0.5 to +6.0 -0.5 to +3.0 2400 +13 50 8:1 -40 to +85 -55 to +150 Unit VDC V mA dBm % C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall (GSM Mode) Operating Frequency Range Maximum Output Power Total Efficiency Input Power for Max Output Output Noise Power Specification Min. Typ. Max. Unit Condition Temp=+25C, VCC =3.5V, VAPCGSM =2.6V, PIN =6dBm, Freq=880MHz to 915MHz, 25% Duty Cycle, Pulse Width=1154s +34.5 +32.0 47 +4 880 to 915 35.5 55 +6 +8 -72 -81 MHz dBm dBm % dBm dBm dBm dBm dBc dBc dBm Temp = 25C, VCC =3.5V, VAPCGSM =2.6V Temp=+85 C, VCC =2.9V, VAPCGSM =2.6V At POUT,MAX, VCC =3.5V RBW=100kHz, 925MHz to 935MHz, POUT > 34.5dBm RBW=100kHz, 935MHz to 960MHz, POUT > 34.5dBm VAPCGSM =0.2V, PIN=+8dBm Forward Isolation Second Harmonic Third Harmonic All other non harmonic spurious Input Impedance Input VSWR Output Load VSWR Output Load Impedance -40 -50 50 -30 -35 -43 -36 2.5:1 8:1 50 2.6 0.2 V V dB dB/V pF mA A S V V A A POUT,MAX-5dB Power Control "ON" Power Control "OFF" Power Control Range Gain Control Slope APC Input Capacitance APC Input Current Turn On/Off Time 0.5 70 100 4.5 10 5 10 2 Overall Power Supply Power Supply Voltage 2.9 Power Supply Current 2 1 3.5 4.7 10 2-262 Rev A3 010702 RF3108 Parameter Specification Min. Typ. Max. Unit Condition Temp=25C, VCC =3.5V, VAPCDCS/PCS =2.6V, PIN =6dBm, Freq=1710MHz to 1910MHz, 25% Duty Cycle, Pulse Width=1154s +32 31.5 29.0 29.5 45 40 Recommended Input Power Range Output Noise Power +4 1710 to 1910 +33 32.5 29.5 30 52 47 +6 +8 -77 MHz dBm dBm dBm dBm % % dBm dBm RBW =100kHz, 1805MHz to 1880MHz and 1930MHz to 1990MHz, POUT > 34.5dBm, VCC =3.5V VAPCDCS/PCS =0.2V, PIN =+8dBm POUT, = +32.5dBm Temp=25C, VCC =3.5V, VAPCDCS/PCS =2.6V, 1710MHz to 1785MHz 1850MHz to 1910MHz Temp=+85C, VCC =2.9V, VAPC =2.6V, 1850MHz to 1910MHz 1710MHz to 1785MHz At POUT,MAX, VCC =3.5V, 1710MHz to 1785MHz At POUT,MAX, VCC =3.5V, 1850MHz to 1910MHz Overall (DCS/PCS Mode) Operating Frequency Range Maximum Output Power 2 POWER AMPLIFIERS Total Efficiency Forward Isolation Second Harmonic Third Harmonic All other spurious Input Impedance Input VSWR Output Load VSWR Output Load Impedance -37 -60 -65 50 8:1 50 -30 -45 -50 -36 2.5 dBm dBc dBc dBm 2.6 V V dB dB/V pF mA A ns V V A A POUT,MAX -5dB Power Control "ON" Power Control "OFF" Power Control Range Gain Control Slope APC Input Capacitance APC Input Current Turn On/Off TIme 0.2 62 0.5 68 100 4.5 10 5 10 100 Overall Power Supply Power Supply Voltage 2.9 Power Supply Current 1.3 1 3.5 4.7 10 Rev A3 010702 2-263 RF3108 Pin 1 2 3 Function Description Interface Schematic Power Supply for the driver stage of the DCS/PCS band. VCC1 DCS/PCS IN RF Input to the DCS/PCS band. This is a 50 input. DCS/PCS Power control for the pre-amplifier, driver, and output stage of the DCS/ PCS band. VAPC GND GSM VAPC GSM IN VCC2 GSM OUT GND GND VCC3 GND GND DCS/PCS OUT GND Ground connection to overall package. Power control for the pre-amplifier, driver, and output stage of the GSM band. RF input to the GSM band. This is a 50 input. Power supply for the driver stage of the GSM band. RF output for the GSM band. This is a 50 output. The output load line matching is contained internal to the package. Ground connection to overall package. Ground connection to overall package. Power supply for the pre-amplifier and output stage for both the DCS/ PCS and GSM bands. Ground connection to overall package. Ground connection to overall package. RF output for the DCS/PCS band. This is a 50 output. The output load line matching is contained internal to the package. Ground connection to overall package. 2 POWER AMPLIFIERS 4 5 6 7 8 9 10 11 12 13 14 Pkg Base 2-264 Rev A3 010702 RF3108 Theory of Operation and Application Information The RF3108 is a triple-band, GSM/DCS/PCS power amplifier with two separate RF inputs and outputs that are internally matched to 50. Pins 2 and 14 of the device provide the RF input and output for the DCS/ PCS band, which is optimized for performance between 1710MHz and 1910MHz. Pins 5 and 8 of the device provide the RF input and output for the GSM band, which is optimized for performance between 880MHz and 915MHz. Both bands include an internal DC-blocking capacitor to protect the device from external DC source inputs and block internal DC from exiting the inputs and outputs of the module. The performance is similar to the performance of the RF2173 and RF2174 MIMIC devices used in dual- or triple-band applications. However, the RF3108 module includes the matching and bypass capacitors required for operation internal to the 9mmx10mm module. However, some external components are required to improve stability, isolation and noise power performance. These components are included on the evaluation board and schematic, and will be described in the following paragraphs. The GSM 900MHz band provides 32dB and the DCS/ PCS 1710MHz to 1910MHz band provides 28dB of small signal gain at full output power. Therefore, the drive level required to fully saturate the output is +4dBm for each band. Based upon HBT (Heterojunction Bipolar Transistor) technology, the part requires only a single positive 3V supply to operate to full specification. The DCS/PCS band input is located at pin 2 of the device and requires no external components. The GSM 900MHz band input is located at pin 6 of the device and also does not require external components. However, a 180 resistor is included at the input of the GSM band to improve the input impedance and isolation performance at low VAPC levels. The output for both high and low bands are internally matched to 50 at the output of pin 14 and 8. A 50 microstrip should be used to interface to the input and output connections. Power control for the GSM 900MHz band is provided through pin 5 of the device, and pin 3 for the DCS/PCS band. The VAPC inputs do not contain any internal bypass capacitors and will require some external filtering. Because the VAPC filtering capacitor is external to the device, the user has the option of choosing a capacitor value that meets the control loop BW and filtering requirement for various applications. In most typical applications with a closed loop power control, the recommended bypass capacitor for this input is approximately 33pF for the GSM band, and 12pF for the DCS/PCS band. However in open loop operation, a 10nF VAPC bypass capacitor is recommended for both bands to filter noise from the external VAPC source. A 10nF capacitor is installed on pins 3 and 5 on the current evaluation board (see the evaluation board schematic). Noise on the VAPC input will degrade the noise power performance of the device, so care should be used to provide a clean VAPC input signal. This is especially important when measuring noise power or stability performance. The voltage supply VCC contains internal bypass capacitors and inductors to filter unwanted noise on the DC supply voltage. However, the main VCC input to the device at pin 11 requires some additional bypass capacitors as shown in the evaluation board schematic. C5 (1uF) and C4 (3.3uF) are required to improve the stability performance. All the internal ground connections are connected to a series of ground pads located on the backside of the package as shown in the pin out diagram. Pins 4, 9, 10, 12, and 13 are also ground connections. The final stages of both bands are connected to the ground pads on the backside of the package. Therefore this ground connection is essential to dissipate heat and to provide proper current flow. Refer to the evaluation board layout as an example of the vias locations and quantity required for proper connection. 2 POWER AMPLIFIERS Rev A3 010702 2-265 RF3108 Pin Out VCC 1 GND GND GND GND 14 PCS OUT 2 POWER AMPLIFIERS PCS IN 2 GND GND GND 13 GND PCS VAPC 3 GND GND 12 GND GND 4 GND GND GND GND 11 VCC GSM VAPC 5 GND GND GND 10 GND GSM IN 6 GND GND 9 GND VCC 7 GND GND GND GND 8 GSM OUT Top View 2-266 Rev A3 010702 RF3108 Application Schematic VCC 2 DCS/PCS VAPC 50 strip 3 4 GSM VAPC GSM RF IN VCC 50 strip 6 7 5 13 12 11 10 9 50 strip 8 GSM RF OUTPUT 1 F 4.7 F VCC Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) VCC C1* 1 nF C2* 10 nF P1 1 CON1 GND P2-1 P2 1 CON1 50 strip 1 2 J5 DCS/PCS VAPC2 50 strip 3 C7 10 nF 50 strip 5 C6 10 nF 50 strip R1 180 6 7 10 9 50 strip 8 J4 GSM RF OUTPUT 4 12 11 C5 1 F + C4 3.3 F VCC 14 13 VCC J1 DCS/PCS RF IN 50 strip J2 PCS/DCS RF OUTPUT J6 GSM VAPC1 J3 GSM RF IN 3108400B VCC C3* 10 nF Components with (*) following the reference designator should not be populated on the evaluation board. Rev A3 010702 2-267 POWER AMPLIFIERS DCS/PCS RF IN 50 strip 50 strip 1 14 PCS/DCS RF OUTPUT 2 RF3108 Evaluation Board Layout Board Size 2.0" x 2.0" Board Thickness 0.031"; Board Material FR-4; Multi-Layer 2 POWER AMPLIFIERS 2-268 Rev A3 010702 RF3108 -35.0 2nd and 3rd Harmonic Performance GSM Band @3.5V VCC, +6dBm PIN, 2.6V VAPC 2nd Fo(dBc) 3rd Fo(dBc) -29.0 Isolation Performance GSM Band @ 3.5V VCC, 2.6V VAPC Iso@+8dBm Pin -30.0 Iso@+4dBm Pin Iso@+6dBm Pin -40.0 -31.0 Harmonic Level (dBc) Isolation (dBm) -32.0 2 POWER AMPLIFIERS 885.0 890.0 895.0 900.0 905.0 910.0 915.0 -45.0 -33.0 -34.0 -50.0 -35.0 -55.0 880.0 885.0 890.0 895.0 900.0 905.0 910.0 915.0 -36.0 880.0 Frequency Frequency (MHz) 36.0 Power and Efficiency Performance @ 3.5V VCC, 2.6V VAPC, +6dBm PIN 53.0 40.0 Power Control Response @ 3.5V VCC, 2.6V VAPC, +6 dBm PIN, 900 MHz Power 60.0 52.0 35.8 51.0 35.6 30.0 Efficiency 50.0 20.0 40.0 Efficiency (%) 35.4 49.0 0.0 30.0 48.0 35.2 47.0 35.0 Power(+6dBm Pin) Efficiency (+6dBm Pin) 34.8 880.0 45.0 915.0 46.0 -10.0 20.0 -20.0 10.0 -30.0 -40.0 0.1 0.3 0.4 0.6 0.7 0.9 1.0 1.2 1.3 1.5 1.6 1.8 1.9 2.1 2.2 2.4 2.5 2.7 2.8 0.0 885.0 890.0 895.0 900.0 905.0 910.0 Frequency Power Control Voltage (V) -36.0 Isolation Performance DCS/PCS Band @ 3.5V VCC, 2.6VAPC DCS/PCS BAND -33.0 Isolation Performance DCS/PCS Band @ 3.5V VCC, 2.6VAPC DCS/PCS Band Iso@+4dBm Pin Iso@+6dBm Pin -36.5 -34.0 Iso@+8dBm Pin -37.0 -35.0 Isolation (dBm) -37.5 Isolation (dBm) -36.0 -38.0 -37.0 -38.5 Iso@+4dBm Pin Iso@+6dBm Pin Iso@+8dBm Pin -38.0 -39.0 1700.0 1710.0 1720.0 1730.0 1740.0 1750.0 1760.0 1770.0 1780.0 1790.0 -39.0 1800.0 1820.0 1840.0 1860.0 1880.0 1900.0 Frequency Frequency Rev A3 010702 2-269 Efficiency (%) Power (dBm) Power (dBm) 50.0 10.0 RF3108 35.0 DCS Band Power and Efficient Performance @ 3.5V VCC, 2.6V VAPC, +8dBm PIN 52.0 35.0 PCS Band Power and Efficiency Performance @ 3.5V VCC, 2.6V VAPC, +8dBm PIN Power (dBm) Efficiency (%) 51.0 34.5 50.0 34.0 34.5 49.0 34.0 Efficiency (%) POWER AMPLIFIERS 33.0 46.0 33.0 45.0 32.5 44.0 32.0 42.0 31.5 Power (dBm) Efficiency 31.0 40.0 1700.0 1710.0 1720.0 1730.0 1740.0 1750.0 1760.0 1770.0 1780.0 1790.0 32.5 43.0 32.0 41.0 31.5 31.0 1800.0 39.0 1820.0 1840.0 1860.0 1880.0 1900.0 Frequency Frequency -50.0 2nd and 3rd Harmonic Performance (DCS/PCS Band) @ 3.5V VCC, +6dBm PIN, 2.6V VAPC 2nd Fo(dBc) 40 Power 30 Efficiency 20 Power Control Response @3.5V, 2.6V VAPC, +6dBm PIN, 1750MHz Efficiency (%) 6 5 4 3 2 1 0 2.8 Power (dBm) -55.0 3rd Fo(dBc) -60.0 Harmonic (dBc) Power (dBm) 2 48.0 33.5 33.5 47.0 Power (dBm) 10 -65.0 0 -10 -70.0 -20 -75.0 -30 -80.0 1700.0 -40 1730.0 1760.0 1790.0 1820.0 1850.0 1880.0 1910.0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 Frequency Power Control Voltage (V) 40.0 Power Control Response @3.5V VCC, 2.6V VAPC, +6dBm PIN, 1850MHz Power 60.0 30.0 Efficiency 50.0 20.0 40.0 0.0 30.0 -10.0 20.0 -20.0 10.0 -30.0 -40.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0.0 Power Control Voltage (V) 2-270 Rev A3 010702 Efficiency (%) Power (dBm) 10.0 |
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